Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation
نویسندگان
چکیده
A quantitative model is developed that comprehends all the unique characteristics of NBTI degradation. Several models are critically examined to develop a reaction/diffusion based modeling framework for predicting interface state generation during NBTI stress. The model captures key NBTI features including recovery, experimental delay and frequency effects successfully.
منابع مشابه
Noise Equivalent Power Optimization of Graphene- Superconductor Optical Sensors in the Current Bias Mode
In this paper, the noise equivalent power (NEP) of an optical sensor based ongraphene-superconductor junctions in the constant current mode of operation has beencalculated. Furthermore, the necessary investigations to optimize the device noise withrespect to various parameters such as the operating temperature, magnetic field, deviceresistance, voltage and current bias have been presented. By s...
متن کاملAPPLIED PHYSICS REVIEWS—FOCUSED REVIEW Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
We present an overview of negative bias temperature instability ~NBTI! commonly observed in p-channel metal–oxide–semiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit performance and review interface traps and oxide charges, their origin, present understanding, and changes due to NB...
متن کاملControversial issues in negative bias temperature instability
In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric, currently vie for dominance. The differences appear fundamental: one model holds that NBTI is a diffusion-limited process and the other holds that it is reaction-limited. Basic issues of disagreement are summariz...
متن کاملA Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability
Theories of interface trap generation in Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) mechanisms are unified under the geometric interpretation and computational modeling of Reaction-Diffusion (R-D) theoryframework. Analytical derivations that predict the degradation are shown, simulation methodology is explained and numerical solutions are obtained. Time-exponen...
متن کاملOn Quasi-Saturation of Negative Bias Temperature Degradation
Five different models have been proposed in recent years to interpret the quasi-saturation of interface trap generation in PMOS Transistors due to Negative Bias Temperature Instability (NBTI). We use both analytical and numerical methods to capture the essence of these models and show that these models predict very different temperature, thickness, and voltage dependence regarding the onset of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Microelectronics Reliability
دوره 47 شماره
صفحات -
تاریخ انتشار 2007